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TFA8x Series Reverse Blocking Triode Thyristor
Features and Benefits
Exceptional reliability Small fully-molded SIP package with heatsink mounting for high thermal dissipation and long life Operating junction temperature to 150C VDRM of 700 or 800 V 8.0 ARMS on-state current 7 mA typical gate trigger current Uniform switching UL Recognized Component (File No.: E118037) (suffix I)
Description
This Sanken reverse blocking triode thyristor is designed for AC power control, providing reliable, uniform switching for half-cycle AC applications. In comparison with other products on the market, the TFA8x series provides increased isolation voltage (1800 VACRMS), guaranteed for up to 1 minute. In addition, commutation dv/dt is improved.
Package: 3-pin SIP (TO-220F)
Applications
Motor control for small tools Temperature control, light dimmers, electric blankets General use switching mode power supplies (SMPS)
Not to scale
Typical Applications
M
Single-phase motor control (for example, electric tool)
In-rush current control (for example, SMPS)
28105.03
TFA8x Series
Selection Guide
Part Number
TFA87(I) TFA87S TFA88(I) TFA88S
Reverse Blocking Triode Thyristor
VDRM (V)
700 700 800 800
UL-Recognized Component
Yes - Yes -
Package
3-pin fully molded SIP with heatsink mount
Packing
50 pieces per tube
Absolute Maximum Ratings
Characteristic Peak Repetitive Off-State Voltage Isolation Voltage Average On-State Current RMS On-State Current Surge On-State Current I2t Value for Fusing Symbol VDRM VISO IT(AV) IT(RMS) f = 60 Hz ITSM f = 50 Hz I2t di/dt IFGM VFGM VRGM PGM PGM(AV) TJ Tstg Value for 50 Hz half cycle sine wave, 1 cycle, ITSM = 120 A IT = IT(RMS) x , VD = VDRM x 0.5, f 60 Hz, tgw 10 s, tgr 250 ns, igp 30 mA (refer to Gate Trigger Circuit diagram) f 50 Hz, duty cycle 10% f 50 Hz, duty cycle 10% f 50 Hz f 50 Hz, duty cycle 10% TJ < TJ(max) Half cycle sine wave, single, non-repetitive 120 72 50 2.0 10 5.0 5.0 0.5 -40 to 150 -40 to 150 A A2 * s A/s A V V W W C C Notes Rating 700 800 1800 8.0 12.6 132 Units V V V A A A
TFA87x TFA88x
TJ = -40C to 150C, RGREF = 1 k
AC RMS applied for 1 minute between lead and case 50 Hz half cycle sine wave, Conduction angle () = 180, continuous operation, TC = 98C
Critical Rising Rate of On-State Current Peak Forward Gate Current Peak Forward Gate Voltage Peak Reverse Gate Current Peak Gate Power Dissipation Average Gate Power Dissipation Junction Temperature Storage Temperature
Thermal Characteristics May require derating at maximum conditions
Characteristic
Package Thermal Resistance (Junction to Case)
Symbol
RJC For AC
Test Conditions
Value
3.5
Units
C/W
Pin-out Diagram
A
Number 1
Terminal List Table
Name A K G Function Anode terminal Cathode terminal Gate control
G K
2 3
123
All performance characteristics given are typical values for circuit or system baseline design only and are at the nominal operating voltage and an ambient temperature, TA, of 25C, unless otherwise stated.
Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
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TFA8x Series
Reverse Blocking Triode Thyristor
ELECTRICAL CHARACTERISTICS
Characteristics Off-State Leakage Current Reverse Leakage Current On-State Voltage Gate Trigger Voltage Gate Trigger Current Gate Non-trigger Voltage Holding Current Critical Rising Rate of Off-State Voltage Symbol IDRM IRRM VTM VGT IGT VGD IH dv/dt Test Conditions VD = VDRM, TJ = 150C, RGREF = 1 k VD = VDRM, TJ = 150C, RGREF = 1 k ITM = 20 A, TC = 25C VD = 6 V, RL = 10 , TC = 25C VD = 6 V, RL = 10 , TC = 25C VD = VDRM x 0.5, RGREF = 1 k, TJ = 125C RGREF = 1 k, TJ = 25C VD = VDRM x 0.5, TJ = 125C, RGREF = 1 k, CGREF = 0.033 F Min. - - - - - 0.2 - - Typ. - - - - 7 - 20 300 Max. 2.0 2.0 1.4 1.0 15 - - - Unit mA mA V V mA V mA V/s
Test Circuit 1
Voltage-Current Characteristic
IF ITM
A
RGREF G
VTM (On state) VRRM VR IH (Off state) VTM VDRM IDRM VF IRRM
K
CGREF
Gate Trigger Current
tgr
IR
igp tgw
Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
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TFA8x Series
Reverse Blocking Triode Thyristor
Commutation Timing Diagrams
Supply VAC
= Conduction angle
VGT
VGATE
ITSM
On-State Currrent
Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
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TFA8x Series
Reverse Blocking Triode Thyristor
Performance Characteristics at TA = 25C
100
160
TJ = 150C
140 120
Half cycle sine wave initial TJ = 125C = 10 ms, f = 20 ms
IT (max) (A)
10
Maximum On-State Current versus Maximum On-State Voltage
ITSM (A)
Surge On-State Current versus Quantity of Cycles 1
100 80 60 40 20
TJ = 25C
0 0.6 1.0 1.4 1.8 2.2 2.6 VT (max) (V) 3.0 3.4
0 200
Half cycle sine wave
1
10 Quantity of Cycles
Half cycle sine wave
100
16 14 12
Maximum Average Power Dissipation versus Average On-State Current PT(AV) (W) TC (C)
180 160
10 8
= 60
= 180 = 120 = 90 = 30
Maximum Allowable Case Temperature 120 versus Average 100 On-State Current
140
6 4 2 0
80 60 40 20
= 30 = 60 = 90 = 120 = 180
0
100
2
4
6 8 IT(AV) (A)
10
12
0
0
2
4
6 8 IT(AV) (A)
10
12
2
IGM = 2 A
10
Gate Voltage versus Gate Current
VGM = 10 V
VGT (V)
VG (V)
PGM =5W VGT (-40C) = 1.5 V VGT (25C) =1V PG(AV) = 0.5 W
1
IGT (-40C) = 30 mA IGT (25C) = 15 mA VGD = 0.2 V
Typical Gate Trigger Voltage versus Junction Temperature at VD = 6 V and RL = 10
1
0.1 10
100 IG (mA)
1000
10 000
0 -60
-20
20
60
TJ (C)
100
140
100
RGREF = 10 k
100
Typical Gate Trigger Current versus Junction Temperature at VD = 6 V and RL = 10
10
IGT (mA)
1
Typical Holding Current versus Junction Temperature at RGREF = 10 k
10
IH (mA)
1
0.1 -60
-20
20
60
TJ (C)
100
140
0.1 -60
-20
20
60
TJ (C)
100
140
Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
5
TFA8x Series
Reverse Blocking Triode Thyristor
Transient Thermal Impedence versus Voltage Pulse Duration
For AC 10
(C/W) Z
JC
1
0.1
1
10
100
T
1000 (ms)
10 000
100 000
Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
6
TFA8x Series
Reverse Blocking Triode Thyristor
TO-220F Package Outline Drawing
4.0 -0.3
+0.2
4.2 0.2 2.8 0.2 0.5 0.1 x 45 8.4 0.2
10.0 0.2
O3.3 0.2 Branding Area
XXXXXXXX XXXXX
0.8 0.2
16.9 0.3
2.6 0.1
2.2 0.2 1.35 0.15 1.35 0.15 0.45 -0.1 3.9 0.2
+0.2 +0.2
0.85 -0.1
View A
(13.5)
View B
2.54 0.1 Terminal dimension at lead tips
1
2
3
0.7 MAX 0.7 MAX
View A
View B
Gate burr: 0.3 mm (max.), mold flash may appear at opposite side Terminal core material: Cu Terminal treatment: Ni plating and Pb-free solder dip Leadform: 600 Package: TO-220F (FM20) Dimensions in millimeters
Branding codes (exact appearance at manufacturer discretion): 1st line, type: TFA8xx 2nd line, lot: YM Where: Y is the last digit of the year of manufacture M is the month (1 to 9, O, N, D)
Leadframe plating Pb-free. Device meets RoHS requirements.
Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
7
TFA8x Series
Reverse Blocking Triode Thyristor
Packing Specification Tube Packing
530
7
35
540
110
172
50 pieces per tube 25 tubes per layer 3 layers per carton 3750 pieces per outer carton Dimensions in mm
Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
8
TFA8x Series
Reverse Blocking Triode Thyristor
Bulk Packing
165
430 175
36 405
123 200 pieces per tray 5 trays per inner carton 4 inner cartons per outer carton 4000 pieces maximum per outer carton Dimensions in millimeters
Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
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TFA8x Series
Reverse Blocking Triode Thyristor
WARNING -- These devices are designed to be operated at lethal voltages and energy levels. Circuit designs that embody these components must conform with applicable safety requirements. Precautions must be taken to prevent accidental contact with power-line potentials. Do not connect grounded test equipment. The use of an isolation transformer is recommended during circuit development and breadboarding.
Because reliability can be affected adversely by improper storage environments and handling methods, please observe the following cautions. Cautions for Storage * Ensure that storage conditions comply with the standard temperature (5C to 35C) and the standard relative humidity (around 40 to 75%); avoid storage locations that experience extreme changes in temperature or humidity. * Avoid locations where dust or harmful gases are present and avoid direct sunlight. * Reinspect for rust on leads and solderability of products that have been stored for a long time. Cautions for Testing and Handling When tests are carried out during inspection testing and other standard test periods, protect the products from power surges from the testing device, shorts between adjacent products, and shorts to the heatsink. Remarks About Using Silicone Grease with a Heatsink * When silicone grease is used in mounting this product on a heatsink, it shall be applied evenly and thinly. If more silicone grease than required is applied, it may produce stress. * Coat the back surface of the product and both surfaces of the insulating plate to improve heat transfer between the product and the heatsink. * Volatile-type silicone greases may permeate the product and produce cracks after long periods of time, resulting in reduced heat radiation effect, and possibly shortening the lifetime of the product. * Our recommended silicone greases for heat radiation purposes, which will not cause any adverse effect on the product life, are indicated below: Type G746 YG6260 SC102 Suppliers Shin-Etsu Chemical Co., Ltd. Momentive Performance Materials Dow Corning Toray Silicone Co., Ltd.
Heatsink Mounting Method
*
Torque When Tightening Mounting Screws. Thermal resistance increases when tightening torque is low, and radiation effects are decreased. When the torque is too high, the screw can strip, the heatsink can be deformed, and distortion can arise in the product frame. To avoid these problems, observe the recommended tightening torques for this product package type 0.490 to 0.686 N*m (5 to 7 kgf*cm). Diameter of Heatsink Hole: < 4 mm. The deflection of the press mold when making the hole may cause the case material to crack at the joint with the heatsink. Please pay special attention for this effect.
*
Soldering * When soldering the products, please be sure to minimize the working time, within the following limits: 2605C 10 s 3505C 3s
*
Soldering iron should be at a distance of at least 1.5 mm from the body of the products
Electrostatic Discharge * When handling the products, operator must be grounded. Grounded wrist straps worn should have at least 1 M of resistance to ground to prevent shock hazard. Workbenches where the products are handled should be grounded and be provided with conductive table and floor mats. When using measuring equipment such as a curve tracer, the equipment should be grounded. When soldering the products, the head of soldering irons or the solder bath must be grounded in other to prevent leak voltages generated by them from being applied to the products. The products should always be stored and transported in our shipping containers or conductive containers, or be wrapped in aluminum foil.
* * *
*
Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
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TFA8x Series
Reverse Blocking Triode Thyristor
The products described herein are manufactured in Japan by Sanken Electric Co., Ltd. for sale by Allegro MicroSystems, Inc. Sanken and Allegro reserve the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Therefore, the user is cautioned to verify that the information in this publication is current before placing any order. When using the products described herein, the applicability and suitability of such products for the intended purpose shall be reviewed at the users responsibility. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to society due to device failure or malfunction. Sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Their use in any application requiring radiation hardness assurance (e.g., aerospace equipment) is not supported. When considering the use of Sanken products in applications where higher reliability is required (transportation equipment and its control systems or equipment, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written confirmation of your specifications. The use of Sanken products without the written consent of Sanken in applications where extremely high reliability is required (aerospace equipment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited. The information included herein is believed to be accurate and reliable. Application and operation examples described in this publication are given for reference only and Sanken and Allegro assume no responsibility for any infringement of industrial property rights, intellectual property rights, or any other rights of Sanken or Allegro or any third party that may result from its use. Anti radioactive ray design is not considered for the products listed herein.
Copyright (c) 2008-2009 Allegro MicroSystems, Inc.
This datasheet is based on Sanken datasheet SSE-24049
Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
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TFA8x Series
Reverse Blocking Triode Thyristor
Worldwide Contacts
Asia-Pacific China Sanken Electric Hong Kong Co., Ltd.
Suite 1026, Ocean Centre Canton Road, Tsimshatsui Kowloon, Hong Kong Tel: 852-2735-5262, Fax: 852-2735-5494
Singapore Sanken Electric Singapore Pte. Ltd.
150 Beach Road, #14-03 The Gateway West Singapore 189720 Tel: 65-6291-4755, Fax: 65-6297-1744
Sanken Electric (Shanghai) Co., Ltd.
Room 3202, Maxdo Centre Xingyi Road 8, Changning District Shanghai, China Tel: 86-21-5208-1177, Fax: 86-21-5208-1757
Europe Sanken Power Systems (UK) Limited
Pencoed Technology Park Pencoed, Bridgend CF35 5HY, United Kingdom Tel: 44-1656-869-100, Fax: 44-1656-869-162
Taiwan Sanken Electric Co., Ltd.
Room 1801, 18th Floor 88 Jung Shiau East Road, Sec. 2 Taipei 100, Taiwan R.O.C. Tel: 886-2-2356-8161, Fax: 886-2-2356-8261
North America United States Allegro MicroSystems, Inc.
115 Northeast Cutoff Worcester, Massachusetts 01606, U.S.A. Tel: 1-508-853-5000, Fax: 1-508-853-7895
Japan Sanken Electric Co., Ltd. Overseas Sales Headquarters
Metropolitan Plaza Building 1-11-1 Nishi-Ikebukuro, Toshima-ku Tokyo 171-0021, Japan Tel: 81-3-3986-6164, Fax: 81-3-3986-8637
Allegro MicroSystems, Inc.
14 Hughes Street, Suite B105 Irvine, California 92618, U.S.A. Tel: 1-949-460-2003, Fax: 1-949-460-7837
Korea Sanken Electric Korea Co., Ltd.
Samsung Life Yeouido Building 16F 23-10, Yeouido-Dong, Yeongdeungpo-gu Seoul 150-734, Korea Tel: 82-2-714-3700, Fax: 82-2-3272-2145
Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com
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